vishay siliconix sud25n15-52 document number: 71768 s09-1501-rev. d, 10-aug-09 www.vishay.com 1 n-channel 150-v (d-s) 175 c mosfet features ? trenchfet ? power mosfet ? 175 c junction temperature ? pwm optimized ? 100 % r g tested ? compliant to rohs directive 2002/95/ec applications ? primary side switch product summary v ds (v) r ds(on) ( )i d (a) 150 0.052 at v gs = 10 v 25 0.060 at v gs = 6 v 23 to-252 s gd top view drain connected to tab ordering information: SUD25N15-52-E3 (lead (pb)- free) n-channel mosfet g d s notes: a. surface mounted on 1" x 1" fr4 board. b. see soa curve for voltage derating. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 150 v gate-source voltage v gs 20 continuous drain current (t j = 175 c) b t c = 25 c i d 25 a t c = 125 c 14.5 pulsed drain current i dm 50 continuous source current (diode conduction) i s 25 avalanche current i ar 25 repetitive avalanche energy (duty cycle 1 %) l = 0.1 mh e ar 31 mj maximum power dissipation t c = 25 c p d 136 b w t a = 25 c 3 a operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol typical maximum unit junction-to-ambient a t 10 s r thja 15 18 c/w steady state 40 50 junction-to-case (drain) r thjc 0.85 1.1
www.vishay.com 2 document number: 71768 s09-1501-rev. d, 10-aug-09 vishay siliconix sud25n15-52 notes: a. guaranteed by design, not s ubject to production testing. b. pulse test; pulse width 300 s, duty cycle 2 %. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. a max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 150 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 24 gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 150 v, v gs = 0 v 1 a v ds = 150 v, v gs = 0 v, t j = 125 c 50 v ds = 150 v, v gs = 0 v, t j = 175 c 250 on-state drain current b i d(on) v ds = 5 v, v gs = 10 v 50 a drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 5 a 0.042 0.052 v gs = 10 v, i d = 5 a, t j = 125 c 0.109 v gs = 10 v, i d = 5 a, t j = 175 c 0.145 v gs = 6 v, i d = 5 a 0.047 0.060 forward transconductance b g fs v ds = 15 v, i d = 25 a 40 s dynamic a input capacitance c iss v gs = 0 v, v ds = 25 v, f = 1 mhz 1725 pf output capacitance c oss 216 reverse transfer capacitance c rss 100 total gate charge c q g v ds = 75 v, v gs = 10 v, i d = 25 a 33 40 nc gate-source charge c q gs 9 gate-drain charge c q gd 12 gate resistance r g 13 tu r n - o n d e l ay t i m e c t d(on) v dd = 50 v, r l = 3 i d ? 25 a, v gen = 10 v, r g = 2.5 15 25 ns rise time c t r 70 100 turn-off delay time c t d(off) 25 40 fall time c t f 60 90 source-drain diode ratings and characteristics t c = 25 c pulsed current i sm 50 a diode forward voltage b v sd i f = 25 a, v gs = 0 v 0.9 1.5 v source-drain reverse recovery time t rr i f = 25 a, di/dt = 100 a/s 95 140 ns
document number: 71768 s09-1501-rev. d, 10-aug-09 www.vishay.com 3 vishay siliconix sud25n15-52 typical characteristics 25 c, unless otherwise noted output characteristics transconductance capacitance v ds - drain-to-source voltage (v) - drain current (a) i d 0 10 20 30 40 50 0246810 6 v v gs = 10 v thru 7 v 4 v 5 v 0 10 20 30 40 50 60 0 1020304050 - transcond u ctance (s) g fs t c = - 55 c 25 c 125 c i d - drain c u rrent (a) 0 500 1000 1500 2000 2500 0 30 60 90 120 150 v ds - drain-to-source voltage (v) c - capacitance (pf) c oss c iss c rss transfer characteristics on-resistance vs. drain current gate charge v gs - gate-to-so u rce v oltage ( v ) - d r a i n c u rrent (a) i d 0 10 20 30 40 50 01234567 -55 c t c = 125 c 25 c - on-resistance ( ) i d - drain current (a) r ds(on) 0.00 0.02 0.04 0.06 0.08 0.10 0 1020304050 v gs = 10 v v gs = 6 v - gate-to-source voltage (v) q g - total gate charge (nc) v gs 0 4 8 12 16 20 0 102030405060 v ds = 75 v i d = 25 a
www.vishay.com 4 document number: 71768 s09-1501-rev. d, 10-aug-09 vishay siliconix sud25n15-52 typical characteristics 25 c, unless otherwise noted thermal ratings vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71768 . on-resistance vs. junction temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 - 50 - 25 0 25 50 75 100 125 150 175 t j - j u nction temperat u re ( ) c v gs = 10 v i d = 5 a r ds(on) - on-resistance ( n ormalized) source-drain diode forward voltage v sd - s o u rce-to-drain v oltage ( v ) - s o u rce c u rrent (a) i s 100 10 1 0.3 0.6 0.9 1.2 t j = 25 c t j = 150 c 0 maximum avalanche drain current vs. case temperature t c - case temperat u re (c) - drain c u rrent (a) i d 0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 safe operating area - drain c u rrent (a) i d 10 0.1 0 0 0 1 0 1 1 1 . 0 limited b y r ds(on) * 1 100 t c = 25 c single p u lse 10 ms 100 ms 1 s, dc 100 s 10 s 100 1 ms v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified normalized thermal transient impedance, junction-to-case square wave pulse duration (s) 2 1 0.1 0.01 10 - 4 10 - 3 10 - 2 10 10 - 1 1 normalized eff ective transient thermal impedance 0.2 0.1 duty cycle = 0.5 30 0.05 0.02 single pulse
document number: 71197 www.vishay.com 18-apr-11 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package information vishay siliconix to-252aa case outline note ? dimension l3 is for reference only. l2 d l1 l3 b b1 e1 e1 d1 a1 c a2 gage plane height (0.5 mm) e b2 e c1 a l h millimeters inches dim. min. max. min. max. a 2.21 2.38 0.087 0.094 a1 0.89 1.14 0.035 0.045 a2 0.030 0.127 0.001 0.005 b 0.71 0.88 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.44 0.206 0.214 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 d1 4.10 4.45 0.161 0.175 e 6.48 6.73 0.255 0.265 e1 4.49 5.50 0.177 0.217 e 2.28 bsc 0.090 bsc e1 4.57 bsc 0.180 bsc h 9.65 10.41 0.380 0.410 l 1.40 1.78 0.055 0.070 l1 0.64 1.02 0.025 0.040 l2 0.89 1.27 0.035 0.050 l3 1.15 1.52 0.040 0.060 ecn: t11-0110-rev. l, 18-apr-11 dwg: 5347
application note 826 vishay siliconix document number: 72594 www.vishay.com revision: 21-jan-08 3 application note recommended minimum pads for dpak (to-252) 0.420 (10.668) recommended mi nimum pads dimensions in inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) return to index return to index
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